Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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BYM13-30-E3/97DIODE SCHOTTKY 30V 1A GL41 Vishay General Semiconductor - Diodes Division |
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- | DO-213AB, MELF | Tape & Reel (TR) | Active | Schottky | 30 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 110pF @ 4V, 1MHz | - | - | Surface Mount | DO-213AB (GL41) | -55°C ~ 125°C |
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BY268TAPDIODE GEN PURP 1.4KV 800MA SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Standard | 1400 V | 800mA | 1.25 V @ 400 mA | Fast Recovery =< 500ns, > 200mA (Io) | 400 ns | 2 µA @ 1400 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 150°C |
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BY458TAPDIODE AVALANCHE 1.2KV 2A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 1200 V | 2A | 1.6 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 3 µA @ 1200 V | - | - | - | Through Hole | SOD-57 | 140°C (Max) |
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BYT51J-TAPDIODE AVALANCHE 600V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 600 V | 1.5A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 600 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT52G-TAPDIODE AVALANCHE 400V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 400 V | 1.4A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 400 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT53B-TAPDIODE AVALANCHE 100V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 100 V | 1.9A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT54G-TAPDIODE AVALANCHE 400V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 400 V | 1.25A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 400 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYV14-TAPDIODE AVALANCHE 600V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 600 V | 1.5A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 600 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYX85TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 800 V | 2A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 800 V | 20pF @ 4V, 1MHz | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BAS16-HE3-18DIODE GEN PURP 75V 150MA SOT23-3 Vishay General Semiconductor - Diodes Division |
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- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | Standard | 75 V | 150mA | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 6 ns | 1 µA @ 75 V | 4pF @ 0V, 1MHz | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 | -55°C ~ 150°C |