Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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BYX84TAPDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Box (TB) | Active | Avalanche | 600 V | 2A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 600 V | 20pF @ 4V, 1MHz | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT52D-TRDIODE AVALANCHE 200V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 200 V | 1.4A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 200 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT53A-TRDIODE AVALANCHE 50V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 50 V | 1.9A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYT54D-TRDIODE AVALANCHE 200V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 200 V | 1.25A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 5 µA @ 200 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYV13-TRDIODE AVALANCHE 400V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 400 V | 1.5A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 400 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYW33-TRDIODE AVALANCHE 300V 2A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 300 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 300 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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BYX84TRDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Avalanche | 600 V | 2A | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 4 µs | 1 µA @ 600 V | 20pF @ 4V, 1MHz | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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RMPG06GHE3_A/100DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
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Superectifier® | MPG06, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 6.6pF @ 4V, 1MHz | Automotive | AEC-Q101 | Through Hole | MPG06 | -55°C ~ 150°C |
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SF1200-TRDIODE GEN PURP 1.2KV 1A SOD57 Vishay General Semiconductor - Diodes Division |
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- | SOD-57, Axial | Tape & Reel (TR) | Active | Standard | 1200 V | 1A | 3.4 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1200 V | - | - | - | Through Hole | SOD-57 | -55°C ~ 175°C |
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RS3A-E3/9ATDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
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- | DO-214AB, SMC | Tape & Reel (TR) | Active | Standard | 50 V | 3A | 1.3 V @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 50 V | 44pF @ 4V, 1MHz | - | - | Surface Mount | DO-214AB (SMC) | -55°C ~ 150°C |