Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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1N6628USDIODE GEN PURP 660V 1.75A A-MELF Microchip Technology |
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![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 660 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
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JANTXV1N5420/TRDIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
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- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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1N6628UDIODE GP 660V 1.75A SQ-MELF B Microchip Technology |
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![]() Datasheet |
- | SQ-MELF, B | Bulk | Active | Standard | 660 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
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JANTXV1N5420DIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
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![]() Datasheet |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | - | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
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1N6631USDIODE GEN PURP 1.1KV 1.4A A-MELF Microchip Technology |
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![]() Datasheet |
- | SQ-MELF, A | Bulk | Active | Standard | 1100 V | 1.4A | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
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1N6642UB2DIODE GEN PURPOSE Microchip Technology |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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1N6631UDIODE GEN PURP 1KV 1.4A E-MELF Microchip Technology |
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- | SQ-MELF, B | Bulk | Active | Standard | 1000 V | 1.4A | 1.6 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1000 V | - | - | - | Surface Mount | E-MELF | -65°C ~ 150°C |
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1N6628US/TRDIODE GEN PURP 600V 2.3A D-5B Microchip Technology |
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- | SQ-MELF, E | Tape & Reel (TR) | Active | Standard | 600 V | 2.3A | 1.5 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 600 V | 40pF @ 10V, 1MHz | - | - | Surface Mount | D-5B | -65°C ~ 150°C |
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1N6628U/TRDIODE GP 660V 1.75A SQ-MELF Microchip Technology |
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- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 660 V | 1.75A | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 2 µA @ 660 V | 40pF @ 10V, 1MHz | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
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1N6631US/TRDIODE GEN PURP 1.1KV 1.4A A-MELF Microchip Technology |
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- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 1100 V | 1.4A | 1.4 V @ 1.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 4 µA @ 1100 V | 40pF @ 10V, 1MHz | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |