Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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UES1001DIODE GEN PURP 50V 1A A AXIAL Microchip Technology |
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- | A, Axial | Bulk | Active | Standard | 50 V | 1A | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
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UES1102E3DIODE GEN PURP 100V 2.5A A AXIAL Microchip Technology |
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- | Axial | Bulk | Active | Standard | 100 V | 2.5A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | 175°C |
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UES1101/TRDIODE GEN PURP 50V 2A A AXIAL Microchip Technology |
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- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 2A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
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JANTXV1N5554USDIODE GEN PURP 1KV 3A D-5B Microchip Technology |
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- | SQ-MELF, E | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 3A | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 1000 V | - | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
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JANHCE1N5809DIODE GEN PURP 100V 3A DIE Microchip Technology |
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- | Die | Bulk | Active | Standard | 100 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 100 V | 60pF @ 10V, 1MHz | - | - | Surface Mount | Die | -65°C ~ 175°C |
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JANHCE1N5807DIODE GEN PURP 50V 3A DIE Microchip Technology |
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- | Die | Bulk | Active | Standard | 50 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
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JANHCE1N5811DIODE GEN PURP 150V 3A DIE Microchip Technology |
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- | Die | Tape & Reel (TR) | Active | Standard | 150 V | 3A | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 150 V | 60pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | Die | -65°C ~ 175°C |
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1N6663/TRDIODE GEN PURP 600V 600MA DO35 Microchip Technology |
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- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 600mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
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UES1001/TRDIODE GEN PURP 50V 1A A AXIAL Microchip Technology |
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- | A, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 1A | 975 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | - | - | - | - | Through Hole | A, Axial | -55°C ~ 175°C |
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UES1102E3/TRDIODE GEN PURP 100V 2.5A A AXIAL Microchip Technology |
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- | Axial | Tape & Reel (TR) | Active | Standard | 100 V | 2.5A | 975 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 2 µA @ 100 V | - | - | - | Through Hole | A, Axial | 175°C |