Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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VS-41HF80DIODE GEN PURP 800V 40A DO203AB Vishay General Semiconductor - Diodes Division |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 800 V | 40A | 1.3 V @ 125 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 800 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 190°C |
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VS-41HFR80DIODE GP REV 800V 40A DO203AB Vishay General Semiconductor - Diodes Division |
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 40A | 1.3 V @ 125 A | Standard Recovery >500ns, > 200mA (Io) | - | 9 mA @ 800 V | - | - | - | Chassis, Stud Mount | DO-203AB (DO-5) | -65°C ~ 190°C |
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HFA25PB60DIODE GP 600V 25A TO247AC Vishay General Semiconductor - Diodes Division |
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HEXFRED® | TO-247-2 | Tube | Obsolete | Standard | 600 V | 25A | 1.7 V @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 20 µA @ 600 V | - | - | - | Through Hole | TO-247AC Modified | -55°C ~ 150°C |
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80EPF10DIODE GEN PURP 1KV 80A TO247AC Vishay General Semiconductor - Diodes Division |
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- | TO-247-3 | Tube | Obsolete | Standard | 1000 V | 80A | 1.35 V @ 80 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC | -65°C ~ 175°C |
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VS-60APF02-M3DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division |
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- | TO-247-3 | Tube | Active | Standard | 200 V | 60A | 1.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 200 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
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VS-60APF04-M3DIODE GEN PURP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division |
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- | TO-247-3 | Tube | Active | Standard | 400 V | 60A | 1.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 400 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
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VS-60APF06-M3DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
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- | TO-247-3 | Tube | Active | Standard | 600 V | 60A | 1.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 600 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
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VS-60APF10-M3DIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
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- | TO-247-3 | Tube | Active | Standard | 1000 V | 60A | 1.4 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 480 ns | 100 µA @ 1000 V | - | - | - | Through Hole | TO-247AC | -40°C ~ 150°C |
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VS-60EPF02-M3DIODE GP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division |
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- | TO-247-2 | Tube | Active | Standard | 200 V | 60A | 1.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 200 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |
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VS-60EPF04-M3DIODE GP 400V 60A TO247AC Vishay General Semiconductor - Diodes Division |
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- | TO-247-2 | Tube | Active | Standard | 400 V | 60A | 1.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 180 ns | 100 µA @ 400 V | - | - | - | Through Hole | TO-247AC Modified | -40°C ~ 150°C |