Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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VI30100SG-E3/4WDIODE SCHOTTKY 100V 30A TO262AA Vishay General Semiconductor - Diodes Division |
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TMBS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | Schottky | 100 V | 30A | 1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 100 V | - | - | - | Through Hole | TO-262AA | -40°C ~ 150°C |
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1N5822/54DIODE SCHOTTKY 40V 3A DO201AD Vishay General Semiconductor - Diodes Division |
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- | DO-201AD, Axial | Tape & Reel (TR) | Obsolete | Schottky | 40 V | 3A | 525 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 40 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 125°C |
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SB320-E3/73DIODE SCHOTTKY 20V 3A DO201AD Vishay General Semiconductor - Diodes Division |
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- | DO-201AD, Axial | Cut Tape (CT) | Active | Schottky | 20 V | 3A | 490 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
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GF1MHE3/67ADIODE GEN PURP 1KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
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SUPERECTIFIER® | DO-214BA | Tape & Reel (TR) | Obsolete | Standard | 1000 V | 1A | 1.2 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 1000 V | - | - | - | Surface Mount | DO-214BA (GF1) | -65°C ~ 175°C |
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V20150S-E3/4WDIODE SCHOTTKY 150V 20A TO220-3 Vishay General Semiconductor - Diodes Division |
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TMBS® | TO-220-3 | Tube | Active | Schottky | 150 V | 20A | 1.43 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 150 V | - | - | - | Through Hole | TO-220-3 | -55°C ~ 150°C |
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V30100SG-M3/4WDIODE SCHOTTKY 100V 30A TO220-3 Vishay General Semiconductor - Diodes Division |
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TMBS® | TO-220-3 | Tube | Active | Schottky | 100 V | 30A | 1 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 100 V | - | - | - | Through Hole | TO-220-3 | -40°C ~ 150°C |
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FESF8AT-E3/45DIODE GEN PURP 50V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 50 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 50 V | - | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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FESF8BT-E3/45DIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 100 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 100 V | - | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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FESF8CT-E3/45DIODE GEN PURP 150V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 150 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | - | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |
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FESF8DT-E3/45DIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | Standard | 200 V | 8A | 950 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | - | - | Through Hole | ITO-220AC | -55°C ~ 150°C |