Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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VS-MBRB1035-M3DIODE SCHOTTKY 35V 10A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Schottky | 35 V | 10A | 570 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 35 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 150°C |
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BY229B-200-E3/45DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 200 V | 8A | 1.85 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 145 ns | 10 µA @ 200 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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BY229B-400-E3/45DIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 400 V | 8A | 1.85 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 145 ns | 10 µA @ 400 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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BY229B-600-E3/45DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 600 V | 8A | 1.85 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 145 ns | 10 µA @ 600 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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BY229B-800-E3/45DIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | Standard | 800 V | 8A | 1.85 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 145 ns | 10 µA @ 800 V | - | - | - | Surface Mount | TO-263AB (D2PAK) | -40°C ~ 150°C |
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VS-MBRB1045-M3DIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | Schottky | 45 V | 10A | 570 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 600pF @ 5V, 1MHz | - | - | Surface Mount | TO-263AB (D2PAK) | -65°C ~ 150°C |
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GP30A-E3/54DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
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SUPERECTIFIER® | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 5 µA @ 50 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
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GP30D-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
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SUPERECTIFIER® | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 3A | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 5 µA @ 200 V | - | - | - | Through Hole | DO-201AD | -65°C ~ 175°C |
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1N5407GP-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
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- | DO-201AD, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | 30pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -50°C ~ 150°C |
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VI20100SG-E3/4WDIODE SCHOTTKY 100V 20A TO262AA Vishay General Semiconductor - Diodes Division |
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TMBS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | Schottky | 100 V | 20A | 1.07 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350 µA @ 100 V | - | - | - | Through Hole | TO-262AA | -40°C ~ 150°C |