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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IMW65R020M2HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
163 | - |
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Datasheet |
CoolSiC™ Gen 2 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 83A (Tc) | 15V, 20V | 18mOhm @ 46.9A, 20V | 5.6V @ 9.5mA | 57 nC @ 18 V | +23V, -7V | 2038 pF @ 400 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3-40 |
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IMBG40R011M2HXTMA1SIC-MOS Infineon Technologies |
1,000 | - |
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Datasheet |
CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 400 V | 13.4A (Ta), 133A (Tc) | 15V, 18V | 14.4mOhm @ 37.1A, 18V | 5.6V @ 13.3mA | 85 nC @ 18 V | +23V, -7V | 3770 pF @ 200 V | - | 3.8W (Ta), 429W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-11 |
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AIMZA75R027M1HXKSA1IGBT Infineon Technologies |
216 | - |
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Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 60A (Tj) | 15V, 20V | 25mOhm @ 24.5A, 20V | 5.6V @ 8.8mA | 49 nC @ 18 V | +23V, -5V | 1668 pF @ 500 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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IPDQ60R020CFD7XTMA1HIGH POWER_NEW Infineon Technologies |
750 | - |
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Datasheet |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 112A (Tc) | 10V | 20mOhm @ 42.4A, 10V | 4.5V @ 2.12mA | 186 nC @ 10 V | ±20V | 7395 pF @ 400 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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IMZC120R022M2HXKSA1IMZC120R022M2HXKSA1 Infineon Technologies |
240 | - |
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Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 80A (Tc) | 15V, 18V | 22mOhm @ 32A, 18V | 5.1V @ 10.1mA | 71 nC @ 18 V | +23V, -7V | 2330 pF @ 800 V | - | 329W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-17 |
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IMDQ75R020M1HXUMA1IMDQ75R020M1HXUMA1 Infineon Technologies |
750 | - |
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Datasheet |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +20V, -2V | 2217 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
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AIMBG75R020M1HXTMA1AIMBG75R020M1HXTMA1 Infineon Technologies |
424 | - |
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CoolSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 34.1A, 20V | 5.6V @ 12.2mA | 70 nC @ 18 V | +23V, -5V | 2326 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-7 |
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AIMDQ75R020M1HXUMA1AIMDQ75R020M1HXUMA1 Infineon Technologies |
670 | - |
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- |
CoolSiC™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 81A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +23V, -5V | 2217 pF @ 500 V | - | 326W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HDSOP-22 |
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IMZA75R020M1HXKSA1SILICON CARBIDE MOSFET Infineon Technologies |
237 | - |
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Datasheet |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 75A (Tj) | 15V, 20V | 18mOhm @ 32.5A, 20V | 5.6V @ 11.7mA | 67 nC @ 18 V | +23V, -5V | 2217 pF @ 500 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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AIMZHN120R040M1TXKSA1SIC_DISCRETE Infineon Technologies |
240 | - |
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Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 18V, 20V | 50mOhm @ 20A, 20V | 5.1V @ 6.4mA | 43 nC @ 20 V | +23V, -5V | 1264 pF @ 800 V | - | 268W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
